型号:

IRF6609TR1PBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 20V 31A DIRECTFET
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF6609TR1PBF PDF
产品目录绘图 IR Hexfet Circuit
DirectFET
标准包装 1,000
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 31A
开态Rds(最大)@ Id, Vgs @ 25° C 2 毫欧 @ 31A,10V
Id 时的 Vgs(th)(最大) 2.45V @ 250µA
闸电荷(Qg) @ Vgs 69nC @ 4.5V
输入电容 (Ciss) @ Vds 6290pF @ 10V
功率 - 最大 1.8W
安装类型 表面贴装
封装/外壳 DirectFET? 等容 MT
供应商设备封装 DIRECTFET? MT
包装 带卷 (TR)
产品目录页面 1524 (CN2011-ZH PDF)
其它名称 IRF6609TR1PBFTR
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